Gettering of epitaxial indium arsenide by the rare earth element holmium

The results of a study the galvanomagnetic properties indium arsenide grown by liquid-phase epitaxy are presented. It is shown that use rare earth element holmium in growth InAs epitaxial layers makes it possible to reduce electron concentration two orders magnitude n=2.1·10 15 cm -3 at T=77 K. This effect due gettering shallow background impurities with formation their compounds melt. With an increase content more than 0.12 mol.% current carriers material begins increase, while mobility decreases influence V As -Ho donor centers. method promising for obtaining A 3 B 5 materials low carriers, which demand optoelectronic industry. Keywords: arsenide, element, Hall coefficient, carriers.